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Article: The roles of somatostatin-expressing (GIN) and fast-spiking inhibitory interneurons in UP-DOWN states of mouse neocortex.

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Fanselow EE; Connors BW
J. Neurophysiol., 2010


Table 1.

Characteristics of up- and down-states in RS, FS, and GIN cells

RS FS GIN
Number of cells 20 12 21
Input resistance, MΩ* 190 ± 17 114 ± 7 225 ± 25
Number of up-states analyzed 436 254 333
up-state duration (ms) 3354 ± 225 3772 ± 370
down-state membrane potential, mV −68.1 ± 1.1 −65.8 ± 1.6 −58.7 ± 1.2
up-state membrane potential, mV −56.2 ± 0.8 −60.2 ± 0.6 −54.3 ± 0.7
down-state firing frequency, Hz 6.4 ± 1.7
up-state firing frequency, Hz 10.3 ± 1.2 30.6 ± 2.6 11.0 ± 1.6
  • All data are medians ± SE.

  • * FS vs. all others P < 0.01; RS and GIN not significantly different from one another, P > 0.6.

  • RS-down vs. RS-up: P < 1 × 10−5: FS-down vs. FS-up: P < 0.01; GIN-down vs. GIN-up: P < 0.05.

  • All values in these two rows different from one another (P < 0.02), except RS up and GIN up (P = 0.6). RS, regular spiking; FS, fast spiking; GIN, GFP-(and somatostatin-) expressing inhibitory neurons.


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Inferred neuron-electrophysiology data values

Neuron Type Neuron Description Ephys Prop Extracted Value Standardized Value Content Source
Neocortex pyramidal cell layer 2-3 somatosensory cortex layer 2/3 regular spiking cell resting membrane potential -68.1 ± 1.1 (20) -68.1 (mV) Data Table
Neocortex basket cell somatosensory cortex layer 2/3 fast spiking cell resting membrane potential -65.8 ± 1.6 (12) -65.8 (mV) Data Table
Neocortex Martinotti cell somatosensory cortex layer 2/3 somatostatin-expressing cell resting membrane potential -58.7 ± 1.2 (21) -58.7 (mV) Data Table
Neocortex pyramidal cell layer 2-3 somatosensory cortex layer 2/3 regular spiking cell input resistance (MΩ*) 190.0 ± 17.0 (20) 190.0 (MΩ) Data Table
Neocortex basket cell somatosensory cortex layer 2/3 fast spiking cell input resistance (MΩ*) 114.0 ± 7.0 (12) 114.0 (MΩ) Data Table
Neocortex Martinotti cell somatosensory cortex layer 2/3 somatostatin-expressing cell input resistance (MΩ*) 225.0 ± 25.0 (21) 225.0 (MΩ) Data Table