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Article: Learning increases intrinsic excitability of hippocampal interneurons.

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McKay BM; Oh MM; Disterhoft JF
J. Neurosci., 2013


Table 1.

Basic membrane properties of included CA1 pyramidal neurons

Naive (n = 32) Pseudo (n = 26) Conditioned (n = 33)
Vrest (mV) -65.5 ± 0.8 -64.3 ± 0.7 -63.4 ± 0.6
Input resistance (MΩ) 84.2 ± 6.3 85.4 ± 4.9 87.8 ± 7.2
Sag (mV) 3.82 ± 0.43 3.54 ± 0.26 3.64 ± 0.32
AP threshold (mV) -50.8 ± 1.0 -50.8 ± 1.0 -52.1 ± 0.7
AP height (mV) 89.2 ± 3.8 90.1 ± 3.8 88.1 ± 3.4
AP half width (ms) 1.37 ± 0.07 1.22 ± 0.08 1.35 ± 0.08
Time to spike (ms) 7.83 ± 0.49 6.91 ± 1.74 7.33 ± 0.49

  • Vrest is the resting membrane potential immediately after breaking into the cell. Input resistance is calculated as the slope of the IV curve. Sag is the difference between the peak and steady state hyperpolarization in response to an 800 ms current injection. Action potentials were elicited by activation of the Schaffer collaterals. Threshold was measured where the first derivative of the upslope of the trace equals 20 mV/ms. Height is the difference between the baseline and maximal depolarization. Half width is width of the action potential at half of the height. Time to spike is the time from the onset of the stimulus artifact to the peak of the action potential. n, Number of neurons.


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Inferred neuron-electrophysiology data values

Neuron Type Neuron Description Ephys Prop Extracted Value Standardized Value Content Source
Hippocampus CA1 pyramidal cell sag amplitude (mV) 3.82 ± 0.43 (32) 3.82 (mV) Data Table
Hippocampus CA1 pyramidal cell spike threshold (mV) -50.8 ± 1.0 (32) -50.8 (mV) Data Table
Hippocampus CA1 pyramidal cell spike amplitude from resting (mV) 89.2 ± 3.8 (32) 89.2 (mV) Data Table
Hippocampus CA1 pyramidal cell resting membrane potential (mV) -65.5 ± 0.8 (32) -65.5 (mV) Data Table
Hippocampus CA1 pyramidal cell spike half-width (ms) 1.37 ± 0.07 (32) 1.37 (ms) Data Table
Hippocampus CA1 pyramidal cell first spike latency (ms) 7.83 ± 0.49 (32) 7.83 (ms) Data Table
Hippocampus CA1 pyramidal cell input resistance (MΩ) 84.2 ± 6.3 (32) 84.2 (MΩ) Data Table